CY7C1011DV33-10ZSXIT code extraction

CY7C1011DV33-10ZSXIT code extraction, chip decryption, mcu crack, dsp crack .
Functional Description
The CY7C1011DV33
[1]
 is a high-performance CMOS Static
RAM organized as 128 K words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0
 through I/O7
), is
written into the location specified on the address pins (A0
through A16
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8
 through I/O15
) is written into the location
specified on the address pins (A0
 through A16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0
 to I/O7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8
 to I/O15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O0
 through I/O15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1011DV33 is available in standard Pb-free 44-pin
TSOP II with center power and ground pinout, as well as
48-ball very fine-pitch ball grid array (VFBGA) packages.