Tuesday, October 30, 2012

CY8C20247-24LKXI chip reverse

CY8C20247-24LKXI chip reverse, chip decryption, chip crack, mcu code extraction, mcu crack, mcu reverse.
Features
■ QuietZone? Controller
 Patented Capacitive Sigma Delta PLUS (CSD PLUS?)
sensing algorithm for robust performance
 High Sensitivity (0.1 pF) and best-in-class SNR performance
to support:
 Ideal for proximity solutions
 Overlay thickness of 15 mm for glass and 5 mm plastic
 Superior noise immunity performance against conducted and
radiated noise and ultra low radiated emissions
 Reliable and robust touch performance in noisy environments
 Standardized user modules for overcoming noise
■ Low power CapSense

 block with SmartSense? auto-tuning
 Supports a combination of up to 31 buttons or 6 sliders, proximity sensors
 Low average power consumption - 28 ?A for each sensor at
runtime (wake from sleep and scan sensors every 125 ms)
 SmartSense auto-tuning
 Sets and maintains optimal sensor performance during
runtime
 Eliminates system tuning during development and production
 Compensates for variations in manufacturing process
■ Driven shield available on five GPIO pins
 Max load of 100 pF at 3 MHz
 Frequency range: 375 kHz to 3 MHz
 Delivers best-in class water tolerant designs
 Robust proximity sensing in the presence of metal objects
■ Powerful Harvard-architecture processor
 M8C CPU with a maximum speed of 24 MHz
 Operating range: 1.71 V to 5.5 V
 Standby mode: 1.1 μA (typ)
 Deep sleep: 0.1 μA (typ)
 Temperature range: –40 °C to +85 °C
■ Flexible on-chip memory
 8 KB flash, 1 KB SRAM
 16 KB flash, 2 KB SRAM
 32 KB flash, 2 KB SRAM
 50,000 flash erase/write cycles
 In-system programming capability
■ Four clock sources
 Internal main oscillator (IMO): 6/12/24 MHz
 Internal low-speed oscillator (ILO) at 32 kHz for watchdog
and sleep timers
 RC crystal oscillator
 Clock input
■ Programmable pin configurations
 Up to 32 general-purpose I/Os (GPIOs)
 Dual mode GPIO
 High sink current of 25 mA for each GPIO. Total 120 mA
maximum sink current per chip
 5 mA source current on port 0 and 1 and 1 mA on port 2,3
and 4
 Configurable internal pull-up, high-Z, and open drain modes
 Selectable, regulated digital I/O on port 1
 Configurable input threshold on port 1
■ Versatile analog mux
 Common internal analog bus
 Simultaneous connection of I/O
 High power supply rejection ratio (PSRR) comparator
 Low-dropout voltage regulator for all analog resources
■ Additional system resources
 I2C slave:
 Selectable to 50 kHz, 100 kHz, or 400 kHz
 Selectable clock stretch or forced Nack mode
 Implementation during sleep modes with less than 100 μA
 I2C wake from sleep with hardware address validation
 12 MHz SPI master and slave
 Three 16-bit timers
 Watchdog and sleep timers
 Internal voltage reference
 Integrated supervisory circuit
 10-bit incremental analog-to-digital converter (ADC)
 Two general-purpose high speed, low power analog comparators
■ Complete development tools
 Free development tool (PSoC Designer?)
■ Package options
 16-pin SOIC (150 mil)
 16-pin QFN – 3 × 3 × 0.6 mm
 24-pin QFN – 4 × 4 × 0.6 mm
 32-pin QFN – 5 × 5 × 0.6 mm
 48-pin QFN – 6 × 6 × 0.6 mm
 30-ball WLCSP

CY8C20246AS-24LKXI chip reverse

CY8C20246AS-24LKXI chip reverse, chip decryption, chip crack, mcu code extraction, mcu crack, mcu reverse.
PSoC Designer? is the revolutionary integrated design
environment (IDE) that you can use to customize PSoC to meet
your specific application requirements. PSoC Designer software
accelerates system design and time to market. Develop your
applications using a library of precharacterized analog and digital
peripherals (called user modules) in a drag-and-drop design
environment. Then, customize your design by leveraging the
dynamically generated application programming interface (API)
libraries of code. Finally, debug and test your designs with the
integrated debug environment, including in-circuit emulation and
standard software debug features. PSoC Designer includes:
■ Application editor graphical user interface (GUI) for device and
user module configuration and dynamic reconfiguration
■ Extensive user module catalog
■ Integrated source-code editor (C and assembly)
■ Free C compiler with no size restrictions or time limits
■ Built-in debugger
■ In-circuit emulation
■ Built-in support for communication interfaces:
 Hardware and software I2C slaves and masters
 Full-speed USB 2.0
 Up to four full-duplex universal asynchronous
receiver/transmitters (UARTs), SPI master and slave, and
wireless
PSoC Designer supports the entire library of PSoC 1 devices and
runs on Windows XP, Windows Vista, and Windows 7.

CY8C20246A-24LKXIT chip reverse

CY8C20246A-24LKXIT chip reverse, chip decryption, chip crack, mcu code extraction, mcu crack, mcu reverse.
The PSoC family consists of on-chip controller devices, which
are designed to replace multiple traditional microcontroller unit
(MCU)-based components with one, low cost single-chip
programmable component. A PSoC device includes
configurable analog and digital blocks, and programmable
interconnect. This architecture allows the user to create
customized peripheral configurations, to match the requirements
of each individual application. Additionally, a fast CPU, Flash
program memory, SRAM data memory, and configurable I/O are
included in a range of convenient pinouts.
The architecture for this device family, as shown in the Logic
Block Diagram on page 2, consists of three main areas:
■ The Core
■ CapSense Analog System
■ System Resources (including a full-speed USB port).
A common, versatile bus allows connection between I/O and the
analog system.
Each CY8C20X36A/46A/66A/96A/46AS/66AS PSoC device
includes a dedicated CapSense block that provides sensing and
scanning control circuitry for capacitive sensing applications.
Depending on the PSoC package, up to 36 GPIO are also
included. The GPIO provides access to the MCU and analog
mux.

CY8C20246A chip reverse

CY8C20246A chip reverse, chip decryption, chip crack, mcu code extraction, mcu crack, mcu reverse.
Features
■ Wide operating range: 1.71 V to 5.5 V
■ Ultra low deep sleep current: 100 nA
 Configurable capacitive sensing elements
 7 μA per sensor at 500 ms scan rate
 Supports SmartSense Auto-tuning
 Supports a combination of CapSense buttons, sliders,
touchpads, touchscreens, and proximity sensors
 SmartSense_EMC offers superior noise immunity for
applications with challenging conducted and radiated noise
conditions
■ Powerful Harvard-architecture processor
 M8C CPU – Up to 4 MIPS with 24 MHz Internal clock, external
crystal resonator or clock signal
 Low power at high speed
■ Temperature range: –40 °C to +85 °C
■ Flexible on-chip memory
 Three program/data storage size options:
 8 KB flash/1 KB SRAM
 16 KB flash/2 KB SRAM
 32 KB flash/2 KB SRAM
 50,000 flash erase/write cycles
 Partial flash updates
 Flexible protection modes
 In-system serial programming (ISSP)
■ Full-speed USB
 12 Mbps USB 2.0 compliant
■ Precision, programmable clocking
 Internal main oscillator (IMO): 6/12/24 MHz ± 5%
 Internal low speed oscillator (ILO) at 32 kHz for watchdog
and sleep timers
 Precision 32 kHz oscillator for optional external crystal
■ Programmable pin configurations
 Up to 36 general-purpose I/Os (GPIOs) (depending on
package)
 Dual mode GPIO: All GPIOs support digital I/O and analog
inputs
 25-mA sink current on each GPIO
 120 mA total sink current on all GPIOs
 Pull-up, high Z, open-drain modes on all GPIOs
 CMOS drive mode –5 mA source current on ports 0 and 1
and 1 mA on ports 2, 3, and 4
 20 mA total source current on all GPIOs
■ Versatile analog system
 Low-dropout voltage regulator for all analog resources
 Common internal analog bus enabling capacitive sensing on
all pins
 High power supply rejection ratio (PSRR) comparator
 8 to 10-bit incremental analog-to-digital converter (ADC)
■ Additional system resources
 I2C slave:
 Selectable to 50 kHz, 100 kHz, or 400 kHz
 SPI master and slave: Configurable 46.9 kHz to 12 MHz
 Three 16-bit timers
 Watchdog and sleep timers
 Integrated supervisory circuit
 Emulated E2PROM using flash memory
■ Complete development tools
 Free development tool (PSoC Designer?)
 Full-featured, in-circuit emulator (ICE) and programmer
 Full-speed emulation
 Complex breakpoint structure
 128 KB trace memory
■ Versatile package options
 16-pin 3 × 3 × 0.6 mm QFN
 24-pin 4 × 4 × 0.6 mm QFN
 32-pin 5 × 5 × 0.6 mm QFN
 48-pin SSOP
 48-pin 7 × 7 × 1.0 mm QFN
 30-ball WLCSP

Thursday, October 18, 2012

CY7C1011CV33-12AXI code extraction

CY7C1011CV33-12AXI code extraction, chip decryption, mcu crack,
dsp crack .
The CY7C1011CV33 is a high performance complementary
metal oxide semiconductor (CMOS) static RAM organized as
131,072 words by 16 bits. This device has an automatic power
down feature that significantly reduces power consumption when
deselected.
To write to the device, take CE and Write Enable (WE) inputs
LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins
(I/O0
 through I/O7
), is written into the location specified on the
address pins (A0
 through A16
). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8
 through I/O15
) is written into
the location specified on the address pins (A0
 through A16
).
To read from the device, take CE and OE LOW while forcing the
Write Enable (WE) HIGH. If BLE is LOW, then data from the
memory location specified by the address pins appear on I/O0
 to
I/O7
. If Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8
 to I/O15
. For more information, see the Truth
Table on page 10 for a complete description of Read and Write
modes.
The input and output pins (I/O0
 through I/O15
) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).

CY7C1011CV33-12ZSXE code extraction

CY7C1011CV33-12ZSXE code extraction, chip decryption, mcu crack, dsp crack .
Features
 Temperature ranges
 Industrial: –40 °C to 85 °C
 Automotive-A: –40 °C to 85 °C
 Automotive-E: –40 °C to 125 °C
 Pin and function compatible with CY7C1011BV33
 High speed
 tAA = 10 ns (Industrial and Automotive-A)
 tAA = 12 ns (Automotive-E)
 Low active power
 360 mW (max) (Industrial and Automotive-A)
 2.0 V data retention
 Automatic power down when deselected
 Independent control of upper and lower bits
 Easy memory expansion with Chip Enable (CE) and Output
Enable (OE) features
 Available in Pb-free 44-pin thin small outline package
(TSOP) II, 44-pin thin quad flat package (TQFP),  and non
Pb-free 48-ball very fine-pitch ball grid array (VFBGA)
packages

CY7C1011DV33-10ZSXIT code extraction

CY7C1011DV33-10ZSXIT code extraction, chip decryption, mcu crack, dsp crack .
Functional Description
The CY7C1011DV33
[1]
 is a high-performance CMOS Static
RAM organized as 128 K words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0
 through I/O7
), is
written into the location specified on the address pins (A0
through A16
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8
 through I/O15
) is written into the location
specified on the address pins (A0
 through A16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0
 to I/O7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8
 to I/O15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O0
 through I/O15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1011DV33 is available in standard Pb-free 44-pin
TSOP II with center power and ground pinout, as well as
48-ball very fine-pitch ball grid array (VFBGA) packages.

CY7C1012AV33-8BGCT code extraction


CY7C1012AV33-8BGCT code extraction, chip decryption, mcu crack, dsp crack .

Features
 High speed
 tAA = 8 ns
 Low active power
 1080 mW (max)
 Operating voltages of 3.3 ± 0.3 V
 2.0 V data retention
 Automatic power-down when deselected
 TTL-compatible inputs and outputs
 Easy memory expansion with CE0
, CE1
 and CE2
 features
 Available in non Pb-free 119 ball PBGA

CY7C1018DV33-10VXIT code extraction

CY7C1018DV33-10VXIT code extraction, chip decryption, mcu crack, dsp crack .
Features
 Pin- and function-compatible with CY7C1018CV33
 High speed
 tAA = 10 ns
 Low Active Power
 ICC = 60 mA @ 10 ns
 Low CMOS Standby Power
 ISB2
 = 3 mA
 2.0V Data retention
 Automatic power-down when deselected
 CMOS for optimum speed/power
 Center power/ground pinout
 Easy memory expansion with CE and OE options
 Available in Pb-free 32-pin 300-Mil wide Molded SOJ

CY7C1019CV33-10ZXAT code extraction

CY7C1019CV33-10ZXAT code extraction, chip decryption, mcu crack, dsp crack .

The CY7C1019CV33 is a high performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and tristate drivers. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. Data on the eight I/O pins
(I/O0
 through I/O7
) is then written into the location specified on
the address pins (A0
 through A16
).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0
 through I/O7
) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), or during a write operation
(CE LOW, and WE LOW).

Tuesday, October 16, 2012

CY7C027-20AXCT MCU Code Reading

CY7C027-20AXCT MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C027-20AXCT MCU Code Reading

CY7C027-20AXCT MCU Code Reading, Programm Reading, MCU Crack,
Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C028-15AXI MCU Code Reading

CY7C028-15AXI MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C028-15AXC MCU Code Reading

CY7C028-15AXC MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C037AV-20AXC MCU Code Reading

CY7C037AV-20AXC MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.

Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C028-15AI MCU Code Reading

CY7C028-15AI  MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.

Features
 True dual-ported memory cells which allow
simultaneous access of the same memory location
 32K x 16 organization (CY7C027V/027AV
 64K x 16 organization (CY7C028V)
 32K x 18 organization (CY7C037AV)
 64K x 18 organization (CY7C038V)
 0.35 micron Complementary metal oxide semiconductor
(CMOS) for optimum speed and power
 High speed access: 15, 20, and 25 ns
 Low operating power
 Active: ICC = 115 mA (typical)
 Standby: ISB3
= 10 A (typical)
 Fully asynchronous operation
 Automatic power-down
 Expandable data bus to 32/36 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flag for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and Industrial temperature ranges
 100-pin Pb-free Thin quad plastic flatpack (TQFP) and 100-pin
TQFP