Thursday, October 18, 2012

CY7C1012AV33-8BGCT code extraction


CY7C1012AV33-8BGCT code extraction, chip decryption, mcu crack, dsp crack .

Features
 High speed
 tAA = 8 ns
 Low active power
 1080 mW (max)
 Operating voltages of 3.3 ± 0.3 V
 2.0 V data retention
 Automatic power-down when deselected
 TTL-compatible inputs and outputs
 Easy memory expansion with CE0
, CE1
 and CE2
 features
 Available in non Pb-free 119 ball PBGA

CY7C1018DV33-10VXIT code extraction

CY7C1018DV33-10VXIT code extraction, chip decryption, mcu crack, dsp crack .
Features
 Pin- and function-compatible with CY7C1018CV33
 High speed
 tAA = 10 ns
 Low Active Power
 ICC = 60 mA @ 10 ns
 Low CMOS Standby Power
 ISB2
 = 3 mA
 2.0V Data retention
 Automatic power-down when deselected
 CMOS for optimum speed/power
 Center power/ground pinout
 Easy memory expansion with CE and OE options
 Available in Pb-free 32-pin 300-Mil wide Molded SOJ

CY7C1019CV33-10ZXAT code extraction

CY7C1019CV33-10ZXAT code extraction, chip decryption, mcu crack, dsp crack .

The CY7C1019CV33 is a high performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and tristate drivers. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. Data on the eight I/O pins
(I/O0
 through I/O7
) is then written into the location specified on
the address pins (A0
 through A16
).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0
 through I/O7
) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), or during a write operation
(CE LOW, and WE LOW).

Tuesday, October 16, 2012

CY7C027-20AXCT MCU Code Reading

CY7C027-20AXCT MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C027-20AXCT MCU Code Reading

CY7C027-20AXCT MCU Code Reading, Programm Reading, MCU Crack,
Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C028-15AXI MCU Code Reading

CY7C028-15AXI MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available

CY7C028-15AXC MCU Code Reading

CY7C028-15AXC MCU Code Reading, Programm Reading, MCU Crack,

Chip Decryption.
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available